Context
Synthetic silicon carbide powder has been mass produced since 1893 for use as an abrasive.
Silicon carbide grains can be bonded together by sintering to form very hard ceramics which are widely used in applications requiring high endurance.
Silicon carbide devices provide operational reliability in high voltage, frequency and high temperature applications.
Silicon carbide semiconductor devices are now beginning to be widely used in industrial applications.
Description
The invention brings together two processes for manufacturing SiC components, in particular using roughening and amorphization, in order to develop LED devices.
In detail, these two processes break down as follows:
- Control of the roughening of SiC by high temperature annealing to extract and improve its luminescence
- Make the SiC layers to an amorphous state beforehand to better extract and improve its luminescence
Competitive advantages
- SiC: infinitely recyclable material
- High T°C / high power and high integration applications
- Reduced overall manufacturing cost
Markets and applications
- Optoelectronics
- Photonics
- Sensors
Development stage
TRL 7
Research team
Laboratoire L2n (Light, nanomaterials and nanotechnologies UTT/CNRS UMR 7076) – University of Technology of Troyes
Intellectual propriety
2 patents
Target partnership
Patent licensing
Contact
Benjamin JOBARD
Business Developer
benjamin.jobard@sayens.fr
